气体放电增强准分子激光溅射反应沉积 AlN 膜

A Deposition of AlN Thin Films with Enhanced Reactively Excimer Laser Sputtering Using Gas Discharge

使用氦气放电增强准分子激光溅射反应沉积了ＡｌＮ薄膜．讨论了脉冲能量密度、氮气放电、基底温度等因素对膜的性能的影响．实验结果发现，当ＤＥ＝１．０Ｊｃｍ－２，ＰＮ２＝１００×１３３．３３Ｐａ，Ｔｓｕｂ＝２００℃，Ｖ＝６５０Ｖ，ｆ＝５Ｈｚ，ｄＳ－Ｔ＝４ｃｍ时，高质量的ＡｌＮ薄膜被成功沉积于Ｓｉ（１００）基片上．Ｘ射线衍射和光谱分析表明，所制备的薄膜是具有高取向性的ＡｌＮ（１００）多晶膜，禁带宽度约为６．２ｅＶ．

AlN (Aluminum Nitride) thin films are prepared by enhanced reactively excimer laser sputtering deposition using gas discharge method. The effects of the laser energy density, the substrate temperature, and the gas discharging on the properties of films are investigated. The quality AlN films are deposited on Si (1 0 0) wafers with D E=1.0J·cm -2 , P N 2 =100×133.33Pa, T sub =200℃, V =650V, f =5Hz, and d S T =4cm. The results show that the film is a axis orientation AlN (1 0 0) polycrystalline film with the band width of 6.2eV after the prepared films are analyzed using XRD and UV Visual spectrum.