期刊文献+

一种新型自适应偏置线性功率放大器 被引量:3

A Novel PVT-insensitive Adaptive-bias Linear Power Amplifier
下载PDF
导出
摘要 为了改善常用电压偏置功率放大器对偏置电压、温度和工艺的敏感影响,提出了一种新型的低耦合自适应偏置电路结构,并采用改进的负载牵引仿真方法,通过在Jazz SiGe BiCMOS0.35μm工艺上的设计实现表明,最大线性功率可以有效地提高2dB,效率可以提高12.5%.工作在2.4GHz频段上的此功率放大器可以适用于蓝牙增强数据率模式和无线局域网802.11b/g等采用线性调制的发送端. To avoid PVT variations in traditional voltage-bias linear power amplifier, a PVT-insensitive current-bias linear power amplifier is described with novel low-coupling adaptive bias circuit and an improved Load-Pull simulation method. Implementation on Jazz SiGe 0.35μm BiCMOS HBT process shows improved results that the maximum linear output power could be enhanced by 2dB and efficiency by 12.5%. The novel 2.4GHz linear PA are very suitable in linear-modulated transmitter, such as Bluetooth Enhanced Data Rate and WLAN 802. 11b/g etc.
出处 《微电子学与计算机》 CSCD 北大核心 2009年第11期5-8,共4页 Microelectronics & Computer
基金 捷顶微电子支持项目
关键词 线性功率放大器 自适应偏置 锗硅工艺 异质结双极型晶体管 linear power pmplifier adaptive bias SiGe heterojunction bipolar transistor
  • 相关文献

参考文献9

  • 1Harame D L. Current status and future trends of SiGe BiCMOS technology [ J ]. IEEE Transactions on Electron Devices, 2001 (48) : 2575 - 2594.
  • 2Nellis K, Zampardi P J. A comparison of linear handset power amplifiers in different bipolar technologies[J]. IEEE Journal of Solid - State Circuits, 2004(39) : 1746 - 1754.
  • 3Johnson J B, Joseph A J, Sheridan D C, et al. Silicon - germanium BiCMOS HBT technology for wireless power amplifier applications [ J ]. IEEE Journal of Solid - State Circuits, 2004(39) : 1605 - 1614.
  • 4肖明,吴玉广,何凤琴.一种低压I_(PTAT)~2曲率校正CMOS带隙基准源的设计[J].微电子学与计算机,2007,24(3):85-87. 被引量:3
  • 5华斯亮,刘岩,王东辉,侯朝焕.一种用于A/D转换器的低电压CMOS带隙电压基准源[J].微电子学与计算机,2008,25(7):210-213. 被引量:5
  • 6Srirattana N, Qureshi M S, Aude A, et al. SiGe HBT power amplifier for IS - 95 CDMA using anovel process,voltagf, and temperature insensitive biasing scheme [J]. International Symposium on Circuits and Systems (ISCAB), 2003(1) : I437-I440.
  • 7Cripps S C. RF power amplifiers for wireless communications[J]. Artech House INC. Norwood, 1999.
  • 8Meyer R G. Low- power monolithic RF peak detector analysis[J]. IEEE Journal of Solid- State Circuits, 1995 (30) : 65 - 67.
  • 9Leung V W, Deng J X, Gudem P S, et al. Analysis of envelope signal injection for improvement of RF amplifier intermodulation distortion[J]. IEEE Journal of Sdlid- State Circutts, 2005(40) : 1888- 1894.

二级参考文献14

  • 1李罗生,洪缨,侯朝焕.一种高性能的Σ-ΔA/D转换器的设计[J].微电子学与计算机,2005,22(1):136-139. 被引量:7
  • 2谢毅,朱云涛,邵丙铣.一种低电压的CMOS带隙基准源[J].微电子学与计算机,2005,22(5):110-113. 被引量:12
  • 3何星,张铁军,侯朝焕.流水线结构FFT/IFFT处理器的设计与实现[J].微电子学与计算机,2007,24(4):141-143. 被引量:9
  • 4Behzad Razavi.模拟CMOS集成电路设计[M].西安交通大学出版社,2000.309—329.
  • 5Andrea Boni.Op-Amps and startup circuits for CMOS bandgap reference with near 1-V Supply.IEEE J.SolidState Circuits,2002,37,1339~1343
  • 6Hironori Banba,Hitoshi Shiga,Akira Umezawa.A CMOS bandgap reference circuit with sub-1-V Operation.IEEE J.Solid-State Circuits,1999,34,670~674
  • 7Gabriel A Rincon Mora,P H D.Voltage References from diodes to precision high-order bandgap circuits[M].Wiley-Interscience,2002,1~167
  • 8Annema A J. Low paver bandgap references featuring DTMOSTs[ J ]. Solid - State Grcuits, 1999(34) :949 - 955.
  • 9Banba H, Shiga H, Umezawa A, T. Miyaba, et al. A CMOS bandgap reference circuit with Sub - 1 - V Operation[J]. Solid- State Circuits, 1999(34) : 570 - 574.
  • 10Wang Xichuan, Si Cuiying, Xu Xing. Curvature- compensated CMOS bandgap reference with 1.8 - V operation [C]// High Density Microsystem Design and Packaging and Component Failure Analysis. HDP'06. Chian: Shanghai University, 2006 : 20 - 23.

共引文献6

同被引文献14

  • 1支传德,杨华中,汪蕙.CMOS射频功率放大器的设计方法[J].电子技术应用,2006,32(9):1-3. 被引量:2
  • 2支传德,杨华中.射频包络消除与恢复功率放大器性能分析[J].Journal of Semiconductors,2007,28(4):582-586. 被引量:5
  • 3Nellis K, Zampardi P J. A comparison of linear handset power amplifiers in different bipolar technotogies [ J ]. IEEE Journal of Solid - State Circuits, 2004(39) : 1746 - 1754.
  • 4Trask C. Class- F amplifier loading networks: a unified design approach[C]//Appeared in Microwave Symposium Digest, IEEE MTT- S International. USA, Anaheim, 1999.
  • 5LeeTH.CMOS射频集成电路设计[M].北京:电子工业出版社,2002.
  • 6Cripps S C. RF power amplifiers for wireless communications[M]. Norwood: Artech House INC. 1999.
  • 7Tu S H L, Chen S C H. 5.25 GHz CMOS Cascode Power Amplifier for 802.11 a Wireless Local Area Network [ J ]. IET Microwaves, Antennas & Propagation,2008,2 (6) :627-634.
  • 8YING R,LEI C, LIANG T, et al. A fully integrated SiGe BiCMOS power amplifier for 2.4 GHz wireless-LAN application [ C ]//IEEE International Conference on Wireless Communications, Networking and Mobile Computing,2010: 1-4.
  • 9张芸,何松柏.一种基于LINC发射机系统的信号分离实现方法[J].现代电子技术,2008,31(23):7-9. 被引量:2
  • 10陈小群,郭玉春,史小卫.OFDM系统高效Doherty功率放大器设计[J].西安电子科技大学学报,2008,35(6):1020-1025. 被引量:3

引证文献3

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部