摘要
综述了钛酸锶钡[Ba1_xSrxTiO3(简称BST)]薄膜的制备方法及研究进展,介绍了衬底和电极材料对BST薄膜性能的影响,讨论了引入缓冲层、掺杂和制备组分梯度薄膜对其性能的影响,并指出了未来BST薄膜材料的研究发展方向。
Ba1-xSrxTiO3 （BST） thin films have excellent dielectric properties. It has potential application in microelectronic devices, such as microwave tunable devices and DRAM, etc. In this paper, the achievements on the fabricating method were summarized, and the influence of substrates and electrode on the properties of BST thin films was studied. The effect of buffer layer, doping and composition gradient on the properties of the films was discussed and the research in future on BST thin films was suggested.
出处
《绝缘材料》
CAS
北大核心
2009年第5期48-51,共4页
Insulating Materials
基金
江西省教育厅青年科学基金项目(GJJ09568)
关键词
BST薄膜
掺杂
组分梯度
barium strontium titanate（BST） thin film
doping
composition gradient
