扩展电阻法测量亚微米器件的结深和杂质分布

The Spreading Resistance Method for Measureing Impurity distribution and Junction Depth of Sub 100 nm Deep Base Transistor

本文介绍了亚微米器件结深和杂质分布的测量方法，叙述了扩展电阻法测量结深的原理。

In this paper. The measuring method of Impuriey distribution and junction depth of sub 100 nm deep base Transistor are presented. By use of spreading resistance technique. the principle of junctiondepth are described. The results are also analyzed and discussed.