摘要
利用分子束外延（ＭＢＥ）生长的高迁移率ＩｎＡｓ外延层成功制备了的薄膜Ｈａｌ器件。这种Ｈａｌ器件具有灵敏度高、温度特性好等优点。室温下的积灵敏度和电压相关的灵敏度分别为１１ｍＶ／ｍＡ·ｋＧｓ和４０ｍＶ／Ｖ·ｋＧｓ（灵敏度比相同掺杂的ＧａＡｓＨａｌ器件高５０％）。在（２０～７０）℃温度区域内，内阻温度系数和Ｈａｌ电压温度系数分别为８×１０－４／℃，－２×１０－３／℃（恒流驱动）和－３×１０－３／℃（恒压驱动）。
High-performance InAs thin film Hall elements(sensors)with high sensitivity low temperature coefficients are developed.The product sensitivity and voltage-related sensitivity of this Hall elements are as large as 11 mV/mA ·kGs and 40 mV/V ·kGs respectively.These values are 50% larger than the standard GaAs Hall elements at the same driving condition.The resistance temperature coefficient and Hall voltage coefficient are 8×10 -4 /℃,-2×10 -3 /℃(current-drive) and -3×10 -3 /℃(voltage-drive)respectively.
出处
《传感器技术》
CSCD
1998年第5期19-21,共3页
Journal of Transducer Technology
关键词
霍尔器件
积灵敏度
电压相关
电阻温度系数
Hall elements Product sensitivity Voltage-related Resistance temperature coefficient
