电容耦合三结高温超导单电子晶体管数值模拟

Numerical Simulation of Capacitance Coupled Three-junction Single Electron Transistor Made of High-Tc Superconductor

基于单电子隧道效应的半经典模型，研究了电容耦合三结高温超导单电子晶体管的基本方程，分析了其I－V特性，并对两结和三结高温超导单电子晶体管的特性进行了比较。结果表明，单电子晶体管的特性与常规晶体管有很大的差别，且三结高温超导单电子晶体管比两结高温超导单电子晶体管有更高的灵敏度和更强的抗电磁干扰能力。

On the basis of a semiclassical model for single electron tunneling effects, the basic charateristic of capacitance coupled three-junction single electrontransistor (SET) Made of High-Tc superconductor is studied and compared withthat of two-junction SET. Results show that the characteristic of SET differs obviously from that of conventional semiconductor transistor. Compared with two-junction SET,three-junction SET has higher sensitivity and stronger capability to resistelectromagnetic perturbance.