摘要
测试了AlGaAs／GaAsHBT的低频噪声，并将测试结果分解为1／f噪声、G－R噪声和白噪声，阐述了它们的产生机理，在此基础上建立了AlGaAs／GaAsHBT输入噪声电压的等效电路模型，该模型有助于AlGaAs／GaAsHBT电路的CAD。
We have measured low-frequency noise of AlGaAs/GaAs HBT, decomposed the result into 1/f noise, G-R noise and white noise, and explained thereasons why they exist. On these bases, we construct an input low-frequency noisevoltage equivalent circuit model of AlGaAs/GaAs HBT, this model can be used inthe AlGaAs/GaAs HBT circuit CAD.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第3期275-279,共5页
Research & Progress of SSE
关键词
HBT
低频噪声
化合物晶体管
AlGaAs/CaAs HBT Low-frequency Noise 1/f Noise G-RNoise White Noise
