摘要
介绍了Ka频段低噪声放大器的设计方法，采用HP－EESOF公司Libra软件对有源器件进行直流分析与参数提取，并运用小信号线性分析法进行电路模拟与设计。研制的放大器在34－36GHz频率下噪声系数小于3dB。
This paper describes the design of a Ka-band HEMT low noise amplifier. The active device parameters are obtained with DC analysis and the circuits aresimulated with a small signal linear analysis by Libra softwave. The amplifier exhibits a noise figure of less than 3. 0 dB from 34 to 36 GHz.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第3期280-284,共5页
Research & Progress of SSE
