用于GaAs贯穿注入和包封退火的AIN薄膜

AIN Thin Film Used as Dielectric Layer for GaAs Ion Implantation and Capped Annealing

用直流反应溅射淀积的AIN薄膜作包封介质对GaAs进行了贯穿注入和包封退火。用电化学C－V法测量了载流子的分布。实验结果与TRIM模拟结果符合得很好。用50nm的AIN包封进行贯穿注入和退火，得到了较小的标准偏差，较陡峭的载流子分布和较高的激活率。应用AIN包封层后，当注入能量180keV，注入剂量7．5×10~13cm~－2时，所得到的最高载流子浓度为1．84×10~18cm~－3，样品方块电阻为118Ω／□。

AIN deposited by DC reactive sputtering is used as dielectric layerfor GaAs ion implantation and capped annealing. Electric-chemical C-V method isused to get carrier profile. The result gives good agreement with that calculated byTRIM program. With 50 nm AIN cap for implantation and annealing, lower straggling, steeper doping profiles and higher electrical activation are achieved. At animplant energy of 180 keV and a dose of 7. 5 × 10~13 cm^-2, with AIN cap, a maximum carrier concentration of 1. 84 × 10~18 cm^-3, is exhibited and the sheet resistivityof the sample is 118 Ω/□.