横向固相外延生长及其影响因素的研究

Lateral Growth of Solid phase Epitaxy and Studies on its Effective Factors

对非超高真空条件下在有ＳｉＯ２图形的硅单晶衬底上用离子束溅射淀积非晶硅薄膜，经过真空退火形成的横向固相外延生长及其影响因素进行了研究，得出了有利于Ｌ－ＳＰＥ生长的材料参数和工艺处理条件。

This paper introduces the deposition of amorphous thin silicon films on the single Si crystal substrates with patterned SiO 2 by ultrahigh vacuum ion beam sputtering and presents the studies on the lateral growth of solid phase epitaxy(L SPE)formed by vacuum annealing and its effective factors.Advantageous material parameters and processing conditions to the L SPE growth were obtained.