半导体GaN/MgAl2O4中缓冲层的透射电子显微分析

Microstructure Analysis on Buffer Layer in GaN/MgAl 2O 4

运用透射电子显微镜（ＴＥＭ）和高分辨透射电子显微镜（ＨＲＥＭ）对金属有机化学气相沉积（ＭＯＣＶＤ）的（０００１）ＧａＮ／（１１１）ＭｇＡｌ２Ｏ４异质结构中的缓冲层进行了观察和分析。

Abstract GaN buffers in (0001)GaN/(111) MgAl 2O 4 heterostructure grown by metalorganic chemical vapor deposition (MOCVD) are studied by high resolution electron microscopy (HREM). It is first found that the primary deposition on the substrate at a low temperature is a 5nm thick island sublayer with hexagonal structure.