Si/Si_(1-x)Ge_x应变层异质结双极晶体管(HBT)交直流特性的仿真研究

Study of Si/Si 1- x Ge x Stained Layer Heterojunction Bipolar Transistors (HBT) by Simulating AC/DC Characteristics

本文报道了Ｓｉ／Ｓｉ１－ｘＧｅｘ应变层异质结双极晶体管（ＨＢＴ）交直流特性的仿真结果．通过用叠代法求漂移－扩散方程的数值解，确定器件的直流特性．再利用瞬态激励法，求解器件的交流特性参数．将基区Ｇｅ摩尔含量ｘ为０．２、０．３１的ＨＢＴ的模拟结果分别与有关文献报道的实验结果进行了比较。

Abstract AC and DC characteristics of Si/Si 1- x Ge x stained layer heterojunction bipolar transistors (HBT) are simulated. The DC properties of devices are determined by considering the drift diffusion equations, while the data of device AC characteristics are obtained by using the transient excitation method. The results of simulation in HBT of Ge with mole fractions of 0 2 and 0 31 in base region agree very well with the published experimental results.