Spindt 型真空微三极管系统的静电场电容数值分析

Numerical Analysis of Electrostatic Field Capacitance for a Spindt Vacuum Microtriode System

以静电学理论为基础，采用边界元方法对Ｓｐｉｎｄｔ型真空微三极管系统的极间电容进行了数值模拟．通过计算多导体系统电荷密度求解极间电容的方法，解决了以往电容数值计算中未解决的第三电极影响和栅极厚度的问题．并通过计算结果从真空微电子器件的应用和优化方面对极间电容与器件几何参数的关系进行了系统的研究，分析结果对真空微电子微波器件的设计有指导作用，所建立的微三极管边界元法计算模型对其它结构的真空微电子器件的电容分析也有参考价值．

The boundary element method is applied to model the electrostatic field capacitance between the electrodes of a vacuum microtriode system. Capacitance is calculated from the distribution of charge density in the multiconductor system including the influence of the third electrode and the thickness of gate which were not considered in previous works. The results agree well with those of Huang et al. The relations between the capacitance and geometric parameters are studied in terms of application and optimization of the vacuum microelectronic device.