摘要
本文介绍了一种新型的低压大通流氧化锌压敏电阻器的制造方法,研究了它的导电机理,提出了改进其性能的途径。
A manufacture method for Low-voltage and Large-Current voltage-Sensitive ZnO Resistor is introduced in the paper, the conductance mechanism is studied. The way to improve the performance of the Resistor is also dealt with.
出处
《传感器世界》
1998年第10期14-16,共3页
Sensor World
关键词
氧化锌
压敏电阻器
半导化
掺杂
击穿电压
Voltage-Sensitive ZnO Resistor,To be semiconductive impurity,Puncture voltage,Current volume