衬底温度对Cr掺杂ZnO薄膜结构和透过率的影响

Effect of substrate temperature on structure and transmittance of Cr-doping ZnO thin films

采用磁控溅射法在载玻片上制备了具有c轴高择优取向的Cr掺杂ZnO薄膜,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和紫外-可见分光光度计(UV-Vis)研究了衬底温度对Cr掺杂ZnO薄膜结构及光学透射特性的影响.结果表明,在衬底温度为400℃时制备的Zn0.98Cr0.02O薄膜具有最好的结晶质量;衬底温度对薄膜的吸收边基本没有影响,但衬底温度为400℃时薄膜具有较高的透过率,其原因是在该条件下薄膜具有较好的结晶质量.

Cr-doping ZnO thin films with c-axis preferred orientation were prepared on glass substrates by magne-tron sputtering at different substrate temperatures. Effect of the substrate temperatures on the structural and optical characteristic of Cr- doping ZnO thin films was studied by X-ray diffraction（XRD） , scanning electron microscopy （SEM） and UV spectrophotometer. The results showed that Zn0.98Cr0.020 thin film had better crystallization quality when the substrate temperature was 400℃ ; The absorption edges had nothing with the substrate temperature. Furthermore, Zn0.98 Cr0.02 0 film possessed a higher transmittance in the visible region due to the film had better crystallization quality when the substrate temperature was 400 ℃.