摘要
采用磁控交替溅射方法以及真空退火处理制备了Zn1-xCrxO薄膜,采用X射线衍射、X射线光电子能谱、物理性质测量仪对样品的结构、表面形态以及磁学性质进行了测试与分析.测试结果表明所有掺杂样品在室温下均具有微弱的铁磁性,并初步给出了其磁性机制.
In this paper Cr-doped ZnO thin films were prepared by magnetron sputtering and annealed in vacuum. The sample＇s structure, surface composition and magnetization behaviors were further measured by X-ray diffraction, XPS and PPMS. The result suggests that the Cr doped ZnO films have room-temperature ferromagnetism and it＇s magnetic mechanism were study.
出处
《天津理工大学学报》
2009年第5期28-31,共4页
Journal of Tianjin University of Technology
基金
天津市重点自然科学基金(06YFJZJC00100)
关键词
稀磁半导体
磁性机制
氧化锌
磁控溅射法
diluted magnetic semiconductor
magnetic mechanism
ZnO
magnetron sputtering
