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含集总元件的微带电路FDTD仿真 被引量:2

Simulation of Microstrip Circuits with Microwave Devices by FDTD Method
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摘要 从Maxwell旋度方程出发,根据集总元件的伏安特性,推导了电阻、电容、电感、二极管、三极管等基本微波电路元件的单网格和多网格FDTD模型。单网格模型是不论集总元件的形状和大小都只占据一个网格的处理方法;多网格模型则是根据集总元件的实际形状和大小将元件跨接在多个网格上,显然这种处理方法更符合实际情况。最后仿真了一个由单个元件组成的简单微带电路——上限限幅器。仿真结果与理论结果吻合得很好,证明了仿真结果的正确性。 According to the Volt - Ampere characteristic of microwave devices, FDTD formers of resistance, capacitance, in ductance,and diode are induced from Maxwell' curl equations. The form includes single grid former and multi grids former, the single grid former is such a method that the device lust takes up a grid in spite of shape and size,The multi grids former is different from single grid former,according to the formula of multi grids former,the device takes up multi grids basing on its shape and size,clearly,this method is more felicitous to the fact. A simple microstrip circuitupper limiter which is composed of single microwave device is simulated. The simulated result tally well with the academic result,this proves that the simulation is right.
作者 赵海洲 李烟
出处 《现代电子技术》 2009年第21期19-24,共6页 Modern Electronics Technique
基金 陕西省自然科学基金资助项目(2005F23)
关键词 集总元件 FDTD 单网格模型 多网格模型 microwave device FDTD single grid former multi grids former
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参考文献7

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二级参考文献2

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