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电荷载流子倍增输出概率分布对图像均匀性影响因素研究 被引量:1

Influencing Factors of Image Uniformity Affected by Output Probability Distribution of Charge Carrier Multiplier
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摘要 为了研究电子倍增电荷耦合器件(EMCCD)中电荷载流子倍增(CCM)结构的输出概率分布及其对图像均匀性的影响,建立了EMCCD中CCM结构的概率模型,利用概率生成函数(PGF)推导了多级CCM倍增结构的输出概率密度函数(PDF),讨论了PDF在提高图像均匀性中的应用。仿真及实验结果表明:当输入信号一定时,输出图像均匀性随倍增增益的增加而逐渐变差;当倍增增益一定时,输入信号越大则输出图像均匀性越差。因此,EMCCD在微光探测条件下图像均匀性较好,且适当地降低倍增增益有利于提高输出图像的均匀性。 The output probability distribution of charge carrier multiplier (CCM) structure from the electron multiplying charge-coupled device (EMCCD) and its influence on image uniformity are studied. The probability model is established for the CCM structure of EMCCD. And based on the probability generating function (PGF) and its properties, the probability distribution function (PDF) of multiple CCM stages is deduced and its application in improving image uniformity is also discussed. The simulation and the experimental results show that: when the input signal is fixed, the higher the multiplication gain is, the poorer the output image uniformity is; when the multiplication gain is fixed, the stronger the input signal is, the poorer the output image uniformity is. As a conclusion, the image uniformity of the EMCCD under the low light level performs better. The output image uniformity is improved by appropriately decreasing multiplication gain.
出处 《南京理工大学学报》 EI CAS CSCD 北大核心 2009年第5期653-658,共6页 Journal of Nanjing University of Science and Technology
基金 国防基础科研项目 武器装备预先研究项目
关键词 电子倍增电荷耦合器件 电荷载流子倍增结构 概率生成函数 概率密度函数 electron multiplying charge-coupled device charge carrier multiplier structure probability generating function probability distribution function
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参考文献12

  • 1Lantz E, Blanchet J L, Furfaro L, et al. Multi-imaging and Bayesian estimation for photon counting with EMCCDs[ J]. Monthly Notices of the Royal Astronomical Society, 2008, 386 : 2262 - 2270.
  • 2何伟基,陈钱,徐融,寇松峰.基于Z域变换的CCM电荷传输模型研究[J].电子学报,2008,36(6):1140-1143. 被引量:4
  • 3Hynecek J. CCM : a new low-noise charge carrier multiplier suitable for detection of charge in small pixel CCD image sensors[ J ]. IEEE Trans on Electron Devices, 1992, 39(8): 1972-1975.
  • 4何伟基,陈钱,屈惠明,秦剑.电子倍增CCD的电荷倍增特性研究[J].光学学报,2008,28(6):1161-1166. 被引量:10
  • 5周蓓蓓,陈钱,张闻文.电子倍增电荷耦合器件中多针相工作模式[J].南京理工大学学报,2008,32(5):599-603. 被引量:6
  • 6Madan S K, Bhaumik B, Vasi J M. Experimental observation of avalanche muhiplication in charge-coupled devices[ J]. IEEE Trans Electron Devices, 1983, ED -30(6) : 694 -699.
  • 7Hynecek J. Impactron: a new solid state image intensifier[J]. IEEE Trans on Electron Devices, 2001,48 (10) : 2238 -2241.
  • 8Jerram P, Pool P, Bell R, et al. The LLLCCD: low light imaging without the need for an intensifier [J]. SPIE, 2001,4306:178 - 186.
  • 9Basden A G, Haniff C A, Mackay C D. Photon counting strategies with low light level CCDs [ J ]. Monthly Notices of the Royal Astronomical Society, 2003, 345 : 985 -991.
  • 10Hynecek J. Excess noise and other important characteristics of low light level imaging using charge multiplying CCDs [ J ]. IEEE Trans on Electron Devices, 2003, 50(1):239-245.

二级参考文献38

  • 1张丕壮,路宏年.面阵CCD微光像感器图像的校正[J].兵工学报,2000,21(4):361-364. 被引量:15
  • 2李仰军,马俊婷,郝晓剑.微光CCD相机的噪声分析与处理[J].应用基础与工程科学学报,2001,9(2):277-282. 被引量:12
  • 3苏学征.EMCCD技术——单光子水平的成像探测[J].现代科学仪器,2005,22(2):51-53. 被引量:19
  • 4鲁进,陈伟民,岑军波.间距对图像传感器调制传递函数矩形模板接触测量的影响[J].光学学报,2006,26(7):1021-1026. 被引量:3
  • 5Hynecek J. Impactron--a new solid state image intensifier[J]. IEEE Trans on Electron Devices, 2001, 48 (10) : 2238 -2241.
  • 6Stefanov K D, Tsukamoto T, Miyamoto A, et al. Electron and neutron radiation damage effects on a two- phase CCD [ J ]. IEEE Transactions on Nuclear Science, 2000, 47(3): 1208-1291.
  • 7s.n. MPP mode [ EB/OL]. http://www, roperscientific. de/tmpp, html, 2004.
  • 8Hynecek J. CCM--a new low-noise charge carrier multiplier suitable for detection of charge in small pixel CCD Image sensors [ J]. IEEE Trans on Electron Devices, 1992, 39(8): 1972-1975.
  • 9Kohley R, Reif K, Pohlmann T, et al. Operating a large-area MPP-CCD with anti-blooming [ J ]. SPIE, 1995, 2 415 : 67 - 76.
  • 10Jerram P, Pool P, Burr D, et al. Electron muhiplying CCDs [ A ]. SNIC Symposium [ C ]. California: e2v Technologies Ltd, 2006. 0019:1 -6.

共引文献87

同被引文献12

  • 1Hynecek J. CCM--a new low-noise charge carder multiplier suitable for detection of charge in small pixel CCD image sensors [J]. IEEE Trans on Electron Devices,1992,39(8): 1972-1975.
  • 2Denvir D J, Coates C G. Electron multiplying CCD technology: application to ultra-sensitive detection of biomolecules[C]//SPIE, 2002, 4626: 502.
  • 3Wang N N. A simple distributed circuit model for chargecoupled devices [J]. IEEE Trans Circuits and System, 1981, CAS-28(1): 2.
  • 4Sheppard S T, Melloch M R, Cooper J A Jr. Development and Operation of Buried Channel Charge Coupled Devices in 6H Silicon Carbide [R]. Electrical and Computer Engineering ECE Technical Reports, 1996: 28-61.
  • 5Deyhimy I, Eden R C, Harris J S Jr. GaAs and related heterojunction charge-coupled devices [J]. IEEE Trans on Electron Devices, 1980, ED-27(6): 1172-1180.
  • 6Suzuki N, Yanai H. Computer analysis of surface-charge transport between transfer electrodes in a charge-couple device [J]. IEEE Trans on Electron Devices, 1974, ED-21(1):73.
  • 7Lenobel M, Cresswell J V, Young L. The surface potential variation in the interelectrode gaps of GaAs cermet-gate charge-coupled devices [J]. Solid-State Electronics, 1990, 33 (7): 851.
  • 8Jerram P, Pool P, Bell R, et al. The LLLCCD: low light imaging without the need for an intensifier [C]// SPIE, 2001, 4306: 178-186.
  • 9Hess K, Sah C T. The ultimate limits of CCD performance imposed by hot electron effects [J]. Solid.State Electron, 1979, 22: 1025.
  • 10Madan S K, Bhaumik B, Vasi J M. Experimental observation of avalanche multiplication in charge-couple devices[J]. IEEE Trans Electron Devices, 1983, ED-33: 694.

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