摘要
采用快速蒸发并冷却衬底的方法,在不同衬底结构上制备出了电阻温度系数(TCR)优于0.25%的红外探测用非晶Ti薄膜。通过表征分析了氧对薄膜电阻影响,以及组分对其性能的影响。研究表明,Ti薄膜有较强吸附氧能力,低价态的Ti利于红外探测。提出采用保护层和非氧硅化物牺牲层以提高薄膜探测能力。
Amorphous Ti films for uncooled infrared detectors with the TCR overmatch of 0.25% were successfully prepared on different structural substrates by the method of quickly evaporating and cooling the substrates. The effects of oxygen on the resistance of films and that of components on performance are characterized. The experimental results show that Ti with lower valence is better for uncooled infrared detectors. It is proposed that the protecting layer and the sacrificial layer with non-oxidative silicide can be applied to improve the detectivity.
出处
《半导体光电》
CAS
CSCD
北大核心
2009年第5期708-710,730,共4页
Semiconductor Optoelectronics
基金
电子科技大学青年基金资助课题
关键词
室温红外探测
红外探测材料
微测辐射热计
Ti薄膜
非晶薄膜
uncooled infrared detection
infrared detection material
microbolometer
thermal conductance
Ti films
amorphous films
