期刊文献+

不同^(60)Co γ剂量率下10位双极D/A转换器的总剂量效应 被引量:4

Total Dose Effect of 10-bit Bipolar D/A Converter Under Different ^(60)Co γ Dose Rates
下载PDF
导出
摘要 为探索电离辐射对数模混合电路的影响,对国产10位双极D/A转换器在60Co γ射线不同剂量率辐照下的电离辐射效应及退火特性进行研究。结果表明:D/A转换器对辐照剂量率十分敏感,在大剂量率辐照时,电路功能正常,各功能参数变化较小;在低剂量率辐照下,各参数变化显著,电路功能出现异常,表现出明显的低剂量率损伤增强效应。最后,结合空间电荷模型对其电离辐射损伤机理进行了初步探讨。 In order to find the responses of digital-to-analog (D/A) converters in ionizing radiation environment, total dose effect and room-temperature annealing behavior of a 10-bit bipolar D/A converter irradiated by different^ 60 Coγ dose rates were investigated. The D/A converter is quite sensitive to dose rates, and its functions are normal at high dose rate irradiation. While under low-dose-rate ease, it works out of the way and many parameters go beyond its permitted range. Thus, it exhibits an enhanced low- dose-rate sensitivity effect. Finally, possible mechanism was discussed based on the space charge model.
出处 《原子能科学技术》 EI CAS CSCD 北大核心 2009年第10期951-955,共5页 Atomic Energy Science and Technology
关键词 双极数模转换器 剂量率 电离效应 低剂量率损伤增强效应 bipolar D/A converter dose rate ionization effect enhance low-dose-rate sensitivity
  • 相关文献

参考文献10

  • 1ENLOW R N, PEASE R L, COMBS W E, et al. Response of advance bipolar processes to ionizing radiation[J]. IEEE Trans Nucl Sci, 1991, NS38(6):1 342-1 351.
  • 2任迪远,陆妩,余学锋,郭旗,艾尔肯.双极器件和电路的不同剂量率的辐射效应研究[J].固体电子学研究与进展,2006,26(4):471-476. 被引量:11
  • 3FLEETWOOD D M, KOSIER S L, NOWLIN R N, et al. Physica mechanisms contributing to enhanced bipolar gain degradation at low dose rates [J]. IEEE Trans Nucl Sci, 1994, NS41 (6):1 871-1 883.
  • 4RASHKEEV S N, CIRBA R C, FLEETWOOD D M, et al. Physical model for enhanced interface-trap formation at low dose rates[J].IEEE Trans Nucl Sci, 2002, NS49(6) : 2 650-2 655.
  • 5WITCZAK S C, LACOE R C, MAYER D C, et al. Space charge limited degradation of bipolar oxides at low electric fields[J]. IEEE Trans Nucl Sci, 1998, NS45(6): 2 339-2 351.
  • 6LEE C I, RAX B G, JOHNSTON A H, et al. Total ionizing dose effects on high resolution (12-/14-bit) analog-to-digital converters [J]. IEEE Trans Nucl Sei, 1994, NS41(6): 2 459- 2 466.
  • 7SHARMA A K, SAHU K, BRASHEARS S. Total ionizing dose (TID) evaluation results of low dose rate testing for nasa programs[C]// 1996 IEEE Radiation Effects Data Workshop. Piscataway, NJ: IEEE, 1996: 13-16.
  • 8郭旗,任迪远,范隆,陆妩,余学锋,严荣良.模数转换器的^(60)Coγ射线和电子辐照效应[J].核技术,1997,20(1):29-33. 被引量:7
  • 9SCHMIDT D M, FLEETWOOD D M, SCHRIMPF R D, et al. Comparison of ionizing radiation induces gain degradation in lateral, substrate, and vertical PNP BJTs[J]. IEEE Trans Nucl Sci, 2002, NS42(6): 1 541-1 549.
  • 10陆妩,任迪远,郭旗,余学锋,范隆,张国强,严荣良.双极运算放大器的辐射效应和退火特性[J].Journal of Semiconductors,1998,19(5):374-380. 被引量:10

二级参考文献12

  • 1任迪远,陆妩,余学峰,范隆,高文钰,严荣良.线性集成电路的辐照响应和电离辐射损伤评估[J].核技术,1993,16(9):551-557. 被引量:8
  • 2任迪远,高文钰,余学锋,陆妩,张国强,范隆,罗来会,严荣良.半导体器件与电路辐照响应测试系统[J].核技术,1994,17(9):542-547. 被引量:3
  • 3陆妩,第四届抗辐射电子学学术会议论文集,1991年
  • 4Ma T P,Ionizing Radiation effects in MOS devices and circuits,1989年,225页
  • 5李星洪,辐射防护基础,1982年
  • 6Enlow E W,Pease R L,Combs W.Response of advanced bipolar processes to ionizing radiation[J].IEEE Trans Nucl Sci,1991,38(6):1342.
  • 7Fleetwood D M,Kosier S L,Nowlin R N,et al.Physical mechanisms contribution enhanced bipolar gain degradation at low dose rates[J].IEEE Trans Nucl Sci,1994,41(6):1871.
  • 8Witczak S C,Schrimpf R D,Fleetwood D M,et al.Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures[J].IEEE Trans Nucl Sci,1997,44 (6):1989.
  • 9Rashkeev S N,Cirba C R,Fleetwood D M,et al.Physical model for enhanced interface-trap formation at low dose rates[J].IEEE Trans Nucl Sci,2002,49(6):2650.
  • 10Hjalmarson H P,Pease R L,Witczak S C,et al.Mechanisms for radiation dose-rate sensitivity of bipolar transistors[J].IEEE Trans Nucl Sci,2003,50(6):1901.

共引文献25

同被引文献26

  • 1任迪远,陆妩,余学锋,郭旗,艾尔肯.双极器件和电路的不同剂量率的辐射效应研究[J].固体电子学研究与进展,2006,26(4):471-476. 被引量:11
  • 2C. I. Lee, B. G. Rax , A. H. Johnston. Total IonizingDose Effects In 12 - Bit SUCCESSIVE - APPROXI- MATION Analog - To - Digital Converters [ C ]. IEEE Radiation Effects Data Workshop, 1993 : 112 - 117.
  • 3T. R. Oldham, F. B. McLean. Total Ionizing DoseEffects in MOS Oxides and Devices [ J ]. IEEE Trans actions on nuclear science,2003,50(3) :483 - 498.
  • 4ENLOW R N,PEASE R L, COMBS W E,etal. Re-sponse of advance biplar processes to ionizing radia- tion [ J ]. IEEE Trans Nucl Sci, 1991, NS38 ( 6 ) : 1342 - 1351.
  • 5Ma T P, Dressendorfer Panl V. Ionizing radiationeffects in MOS devides and circuits [ M ]. English: John Wiley and Sons Inc, 1989:226.
  • 6FRANCO F J, LOZANO J,AGAPITO J A. Ra-diation effects on CMOS R/2R ladder digital-to-analog converters [C] // Proceedings of the 7thEuropean Conference. Netherlands: RADECS,2003: 571-578.
  • 7AGHARA S,FINK R J,CHARLTON W S,etal. Degradation of commercially available DACICs in a mixed-radiation environment [C] // 2002IEEE Radiation Effects Data Workshop Record.Piscataway,NJ : IEEE, 2002 : 34-37.
  • 8AMPE J , THAI V,BUCHNER S,et al. COTSADC & DAC selection and qualification for theGLAST mission [ C ] // 2005 IEEE RadiationEffects Data Workshop Record. Piscataway,NJ jIEEE, 2005: 79-84.
  • 9FRANCISCO J F, YI ZONG, JUAN A D A, etal. Radiation tolerant D/A converters for theLHC cryogenic system[J], Nuclear Instrumentsand Methods in Physics Research A,2005,553(3): 604-612.
  • 10JOHNSTON A H,LEE C I,RAX B G. En-hanced damage in bipolar devices at low doserates : Effects at very low dose rates [J]. IEEETrans Nucl Sci, 1996, 43(6): 3 049-3 059.

引证文献4

二级引证文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部