摘要
离子注入制程已成为器件设计的最前端工作,现在更被视为实现32nm和22nm晶体管制程的推动要素。器件漏电流、浅结面制作,器件尺寸缩小,以及急速增加成本的挑战,正在限制摩尔定律的延伸。针对32nm节点离子注入制程器件的工艺要求,介绍了离子注入设备的发展方向。
The ion implantation process has become a front-end work of device design, and now even been viewed as the realization of 32 - 22 nanometer transistor process driven element. The device drain current, shallow junction implantation, the device dimensions shrink, as well as the challenges of rapid increase in costs, are limiting the extension of Moore＇s Law. This paper describes the direction of development of ion implantation equipment in connection with the 32 nm node device ion implantation process technological requirements.
出处
《电子工业专用设备》
2009年第10期1-8,共8页
Equipment for Electronic Products Manufacturing
关键词
32
nm节点器件
漏电流控制
超浅结注入
大束流低能注入
单晶片注入
机械扫描
32 nm Node Devices
Drain Current Control
Ultra-Shallow Junction Implantation
Large beam low-energy Implantation
Single-Chip Implantation
Mechanical Scanning
