射频溅射沉积不同厚度Ca膜退火直接形成Ca_2Si膜(英文)

Selective Growth of Ca_2Si Film by Annealing the Sputtered Ca Films with Different Thickness

使用射频磁控溅射系统在恒定溅射功率、Ar气压和Ar气流流量下,在Si(100)衬底上,分别沉积不同厚度的Ca膜。随后,800℃真空退火45分钟、1小时和1.5小时。半导体钙硅化物,即立方相的Ca2Si膜和简单正交相的Ca2Si膜首次、单独、直接生长在Si(100)衬底上。实验结果指明在多相共生的Ca-Si化合物中,Ca膜的沉积厚度、因溅射而生长的Ca-Si化合物的生长厚度决定了某一个单相的钙硅化物独立的生长。另外,退火温度为800℃时,有利于单相钙硅化物的独立生长。并且,退火时间也是关键因素。

Ca films with different thickness,were deposited directly on Si（100） substrates by using a radio frequency（R.F.） magnetron sputtering system（MS） and then were annealed at 800℃ for 45min,60min and 90min in a vacuum furnace for interdiffusing the deposited ions,atoms and clusters and Si atoms.The structural and morphological features of the films were tested by X-ray diffractometry（XRD）,scanning electron microscopy（SEM） and energy dispersive analysis of X-rays（EDAX）.The cubic Ca2Si and the orthorhombic Ca2Si were grown directly and individually on Si（100） substrates for the first time.The experimental results indicate that the selective growth of a single phase Ca-silicide depends on the growth thickness and depositing thickness by sputtering.Besides,800℃ is the adaptive annealing temperature for growing Ca2Si films.Additionally,annealing time is also a principal factor for growing Ca2Si films.