第三代碲镉汞器件的研发进展

Advances in Third-Generation HgCdTe Devices

通过对近年来部分英语文献的归纳分析,介绍了国外第三代碲镉汞(MCT)器件的研发现状,包括具有新颖器件结构的双色或三色探测器、雪崩光电二极管和多光谱阵列等.分析了三代MCT器件在阵列规模、光伏技术的甚长波应用、多色、读出电路等方面的研究进展.指出利用复杂可控的气相外延生长方法,例如分子束外延(MBE)和金属有机气相化学沉积(MOCVD)等,已可制备近乎理想设计的异质结光电二极管.随着基于MBE生长的MCT技术发展,法国和美国已分别可以制备4英寸以上的大尺寸锗基和硅基晶片,并在晶片上以可控厚度沉积光敏薄膜.依据目前的发展,三代MCT技术有望3、5年内达到量产的水平.

By summarizing and analyzing some related papers published in English over the last few years, the status of third generation Mercury Cadmium Tellurium （MCT） devices, including two-colour or three-colour detectors with novel device structure, avalanche photodiodes and multi-spectral arrays, were presented. The developments of third generation MCT devices in array size, very long wavelength application of photovoltaic technology, multi-colour, readout capability and etc were analyzed. It is pointed that the sophisticated controllable vapor phase epitaxial growth methods, such as Molecular Beam Epitaxy （MBE） and metal organic chemical vapour deposition （MOCVD）, can be used to fabricate almost ideally designed heterojunction photodiodes. With the progress of MCT technology based on MBE, large wafers （4 inches and more） are available on germanium in France and on silicon in the USA. This enables larger wafer to have a sensitive thin film deposition, of which the thickness is controllable. Third generation MCT technology is hopeful of achieving the high-rate production in three or five years according to the related progress right now.