InGaP/GaAs HBT功率放大器的键合线匹配技术

Bond-Wire Matching Techniques of InGaP/GaAs HBT Power Amplifier

射频集成电路的性能很大程度受到封装的影响,与集成电路设计和制造工艺相比,封装技术并没有受到相应的关注。用一种新的键合线匹配功率放大器(PAM)的方法,利用封装寄生参数进行电路匹配设计,消除了封装的负面影响,并进行了试制验证;电路芯片采用InGaP/GaAs HBT工艺制作并使用了16引脚微小引线框架(MLP)封装。无需芯片外表面贴装电容和电感,实现了功率放大器的低损耗输出阻抗匹配,节省了宝贵的线路板空间。电路测试指标很好地达到了设计要求,证明了该技术的可行性,为高性能、低成本射频功率放大器的开发提供了新的思路。

The performance of a radio frequency integrated circuit can be dramatically affected by the package environment, yet it has received comparatively little attention compared to IC fabrication technology and RFIC design. A new bond-wire matching technique of power amplifier with parasitic parameters of the package was used to countervail the negative impacts. Based on this method, a low-loss output impedance matching power amplifier （PAM） was implemented using InGaP/GaAs HBT process and 16-leads microleadframe package （MLP）. Furthermore, the expensive PCB roomage was saved because the SMD capacitance and inductance is no use in the PAM. The measured results coincide well with simulation. The practicability of this technique is proved. And it provides a new idea for low cost and high-powered RFIC development.