PECVD淀积Si_3N_4作为光刻掩膜版的保护膜

Silicon Nitride Thin Film Deposited by PECVD as a Protecting Layer on Photolithography Mask

采用等离子增强化学汽相淀积(PECVD)方法淀积Si3N4薄膜作为光刻掩膜版的保护膜,可以降低掩膜版受损程度,延长使用寿命。分析了Si3N4膜厚的选取要求,给出了PECVD淀积Si3N4膜的工艺条件。实际制作了带有Si3N4保护的光刻掩膜版,并与不带Si3N4保护的掩膜版的使用情况做了对比。结果表明,带有Si3N4保护的光刻掩膜版的使用寿命可明显延长2倍以上。

Si3N4 thin film was deposited as a protecting layer of lithography mask using PECVD to reduce the damage and extend the lifetime of the mask.The optimal thickness of Si3N4 film was analyzed and the process parameters in PECVD were proposed.In addition,the mask with Si3N4 protection layer was manufactured and compared with that without Si3N4 protection layer.The results show that the lifetime of the mask with Si3N4 protection layer is extend twice at least.