在Si-Ge晶体外延生长中的RHEED花样研究

A study of RHEED pattern from the epitaxial growth of Si-Ge crystal

在晶体衍射理论基础上,利用运动学理论解释了反射式高能电子衍射(reflection high energy electron diffraction,RHEED)在Si-Ge晶体外延生长过程中不同阶段出现的花样.尤其研究了晶体岛状生长之后出现的RHHED透射式衍射花样,并给出了相应的解释.解释了硅锗外延生长过程中的多晶环图案和孪晶衍射图案的含义,并给出各个生长阶段演化的工艺条件.

The patterns of Reflection high energy electron diffraction （RHEED） from the epitaxial growth of Si-Ge crystal are interpreted basing on the kinetical diffraction theory of crystal. The transmission pattern is studied and interpreted, which relates to the rough surface after crystal growth. The RHEED patterns of polycrystalline rings and twin crystal and their evolvements are analyzed with respec to the epitaxial growth conditions.