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基底显微结构对薄膜生长影响的Monte Carlo模拟研究 被引量:1

Monte Carlo simulation and study of effect of substrate microstructure on thin film growth
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摘要 利用Monte Carlo方法研究了基底显微结构对薄膜生长的影响.对不同显微结构基底上薄膜生长的初始阶段岛的形貌和尺寸与薄膜覆盖度和入射粒子沉积速率之间的关系进行了模拟和分析.模型中考虑了粒子沉积、吸附粒子扩散和蒸发等过程.结果表明,基底显微结构对薄膜生长具有明显影响.当沉积温度为300 K、沉积速率为0.005 ML/s(Mono1ayer/second,简称ML/s)、覆盖度为0.05 ML时,四方基底上薄膜生长呈现凝聚生长.随着覆盖度增加,岛的尺寸变大,岛的数目减少.而对于六方基底,当覆盖度从0.05 ML变化到0.25 ML时,薄膜生长经历了一个从分散生长过渡到分形生长的过程.无论是四方还是六方基底,随着沉积速率的增加,岛的形貌由少数聚集型岛核分布状态向众多各自独立的离散型岛核分布状态过渡. The effect of the substrate microstructure on the thin film growth is studied by Monte Carlo method. The change of the island morphology and size at the early stage of the thin film growth with coverage and deposition rate on different microstructure substrates are simulated and analyzed. In our model,three processes are considered: particle deposition, adatom diffusion and adatom reevaporation. The result shows that the microstructure of the substrate has an obvious effect on the thin film growth. With the coverage of 0.05 ML,the thin film growth on the tetragonal substrate has been taken on condensation at the temperature of 300 K and the deposition rate of 0. 005 ML/s(Monolayer/second,ML/ s). With coverage increasing,the mean size of islands becomes larger and its number is decreased. But for the hexagonal substrate,the island growth transits from sporadic to fractal shape with coverage increasing from 0.05 ML to 0.25 ML. With increase of deposition rate,facial morphology of the thin film on the tetragonal and hexagonal substrates changes from distributing state of collective and handful islands to one of numerous and discrete islands.
出处 《原子与分子物理学报》 CAS CSCD 北大核心 2009年第5期903-908,共6页 Journal of Atomic and Molecular Physics
基金 沈阳市科学技术计划(1071115-1-00) 辽宁省教育厅科研计划(2008224) 辽宁省科技厅科研计划(20081030)
关键词 MONTE CARLO模拟 薄膜生长 基底显微结构 薄膜覆盖度 入射粒子沉积速率 Monte Carlo simulation, growth of thin film, microstructure of substrate, coverage with film, deposition rate of incident particles
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参考文献11

  • 1郑小平,张佩峰,刘军,贺德衍,马健泰.薄膜外延生长的计算机模拟[J].物理学报,2004,53(8):2687-2693. 被引量:14
  • 2刘祖黎,魏合林,王汉文,王均震.薄膜生长的随机模型[J].物理学报,1999,48(7):1302-1308. 被引量:34
  • 3Witten TA,Sander LM.Diffusion-limited aggregation, a kinetical critic phenomenon[].Physical Review.1981
  • 4Bruschi P,Cagnoni P,Nannini A.Temperature-dependent Monte Carlo simulation of thin metal film growth and percolation[].Physical Review B Condensed Matter and Materials Physics.1997
  • 5Voter A F.Classically exact overlayer dynamics: diffusion of rhodium clusters on Rh(100)[].Physical Review B Condensed Matter and Materials Physics.1986
  • 6Roder H,Hahn E,Brune H,et al.Building one-and two-dimensional nanostructures by diffusion-controlled aggregation at surfaces[].Nature.1993
  • 7Michely T,Hohage M,Bott M,Comsa G.Inversion of growth speed anisotropy in two dimensions[].Physical Review Letters.1993
  • 8Brune H,Roder H,Boragno C,et al.Microscopic view of nucleation on surface[].Physical Review Letters.1994
  • 9Salik J.Monte Carlo study of reversible growth of clus-ters on a surface[].Physical Review B Condensed Matter and Materials Physics.1985
  • 10Ogale S B,Madhukar A.Low-energy ion beam effects on themolecular beam epitaxical grow ofⅢ-Ⅴcompound semicon-ductors:A Monte Carlo simulation study[].Applied Physics Letters.1989

二级参考文献29

  • 1[11]Battailr C C, Srolovitz D J 1996 J. Appl. Phys. 82 6293
  • 2[12]Wang L G,Clancy P2001 Surf. Sci. 47325
  • 3[13]Bruschi P,Cagnoni P,Nannini A 1997 Phys. Rev. B 55 7955
  • 4[14]LandauDP,PalS,ShimSY1999 Comp. Phys. Comm. 121 341
  • 5[15]Wei H L,Liu Z L,Yao K L 2000 Vacuum56185
  • 6[16]Numinen L, Kuroen A, Kaski K 2000 Phys. Rev. B 63 35407
  • 7[17]Bruschi P,Nannini A,Pitto M 2000 Comp. Mat. Sci. 17 299
  • 8[18]Bruschi P,Nannini A,Pieri F 2000 Phys. Rev. B 63 345406
  • 9[19]Pomeroy M,Joachim J,Colin C 2002 Phys. Rev. B 66 235412
  • 10[20]Wadley H N G,Zhou X,Johnson R A 2001 Prog. Mat. Sci. 46329

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