期刊文献+

新型隧穿磁强计结构-多梳齿结构 被引量:1

The Structure Optimization of the Horizontal Tunneling Magnetometer
下载PDF
导出
摘要 水平式隧穿磁强计在应用中,直梁所受的最大应力超出其许用应力出现直梁断裂的现象,同时由于所需驱动电压较高,限制了磁强计的应用范围。文中优先考虑梁内部应力对隧穿磁强计直梁尺寸进行设计,并改变其结构,采用新型的隧穿磁强计结构多梳齿结构,然后采用Ansys验证了改进后结构的正确性,同时对驱动电压和理论灵敏度进行了计算。研究结果表明:在保证直梁正常工作的前提下该设计可将磁强计所需的驱动电压降低到16.5V、在文中设计宽度下灵敏度较原宽度提高了1.35倍。 The straight girder easily arose fracture in the application of the horizontal tunneling magnetometer, as the maximum standing stress of the girder is not more than the permissible stress, and the driving voltage is very high that leads to limit the applied extension of magnetometer. So this paper gives priority to the stress of the interior of the straight girder, in which method designs the ruler of the straight girder of the horizontal tunneling magnetometer, then chance its structure, the use of new tunneling magnetometer structure of multi-comb structure, then whether or not the straight girder is fracture base on Ansys, and calculates the driving voltage of the structure and the sensitivity in theory. Results from investigation show that: on the premise of normal working of the straight girder, the magnetometer's driving voltage can decline to 16.5V, in this article under the design width the sensitivity is better than the original width increased 1.35 times.
出处 《机械工程师》 2009年第11期13-15,共3页 Mechanical Engineer
基金 上海市教育委员会科研项目--隧穿式MEMS磁强计的研制技术研究(06ZZ97)
关键词 隧穿磁强计 许用应力 多梳齿结构 驱动电压 灵敏度 tunneling magnetometer the permissible stress multi-comb structure driving voltage sensitivity
  • 相关文献

参考文献6

二级参考文献36

  • 1汤学华,尤政,杨拥军.水平式隧穿磁强计的建模与仿真[J].压电与声光,2005,27(5):566-568. 被引量:4
  • 2汤学华,何洪涛,罗蓉,李倩,郭荣辉,吝海峰.水平式隧穿磁强计表头的制作[J].压电与声光,2006,28(1):48-50. 被引量:2
  • 3汤学华,尤政.水平式隧穿磁强计的性能实验[J].清华大学学报(自然科学版),2006,46(2):203-205. 被引量:3
  • 4阎梅芝,董哲,任大海,尤政.扭摆型隧穿磁强计的设计方法研究[J].仪器仪表学报,2006,27(9):1154-1158. 被引量:2
  • 5汤学华,尤政,胡晓莉.隧穿磁强计驱动电压的理论计算与实验验证[J].传感技术学报,2006,19(05B):2047-2049. 被引量:4
  • 6MILLER L M, KENNY T W, KOVACICH J A, et al. A μ-magnetometer based on electron tunneling[C]. San Diego CA: Proceedings of the 9th International conference on MEMS, 1996:462-472.
  • 7DILELLA D, WHITMAN L J, COLTON R J,et al.A micro-machined magnetic-field sensor based on an electron tunneling displacement transducer [J]. Sensors and Actuators, 2000,86 (1-2) : 8-20.
  • 8KUBENA R L, ATKINSON G M, ROBINSON W P, et al. A new miniaturized surface micro machined tunneling accelerometer [J] .IEEE Elec Dev Lett,1996,17(6): 306-308.
  • 9Liu C H,Kenny T W.A high-precision,wide-bandwidth micromachined tunneling accelerometer[J].Journal of Microeletromechanical Systems,2001,10(3):425-433.
  • 10Liu Cheng-Hsien.Design,Microfabrication and Control of High-Performance Micromachined Tunneling Accelerometers[Z].Stanford University,United States,2000.

共引文献4

同被引文献10

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部