摘要
利用氮化铝陶瓷作为衬底,在不同甲烷与氢气的配比流量下,利用热丝CVD方法制备了一个系列的金刚石薄膜,通过测量样品在430nm处的光致荧光(PL)谱及其Raman光谱,给出金刚石薄膜的结构与生长信息.薄膜PL强度随甲烷浓度增加到3%时达到最大,继续增加甲烷浓度PL强度下降.
Using AIN ceramic as substrate, we grow a series of diamond films under different CH 4 to H 2 volume ratio. Comparing their temperature dependent PL from room temperature down to 100K and correlating the PL spectra with their Raman shift, we can get some of the structure and growth information. The intensity of diamond s photoluminescence increases with the ratio of CH 4 to H 2 at first, and reaches its maximum when the CH 4 ratio is 3% . Afert that, PL decrease when the CH 4 growth rate continue to increase. We think the PL intensity might be caused by the recombination of defect states(such as stack fault). When the CH 4 concentration increase, the graphite components also increase, which enhance the possibility of non radiative transition.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1998年第3期230-232,共3页
Chinese Journal of Luminescence
基金
863计划新材料领域资助