MOCVD生长GaN中带尾和激子发光特性研究

PHOTOLUMINESCENCE PROPERTIES OF BAND TAIL AND EXCITON ON GaN GROWN BY MOCVD

采用低压ＭＯＣＶＤ生长技术制备ＧａＮ，对其界面附近的发光特性及其温度行为进行了研究．实验表明界面附近ＧａＮ的发光呈一宽带发射．并对叠加于宽带发射上的尖锐发光峰及其温度行为进行了讨论．

GaN crystalline have been grown by low pressure MOCVD. The optical properties and its relationship with the densities of dislocation have been studied. It has been investigated that the photoluminescence spectrum of GaN near interface showed as a broaden emission band and some narrow peaks. The broaden band emission may derive from the transition between shallow donor and dislocation related valance band tail. The excitation power and temperature dependence of photoluminescence intensities have been studied. The experimental results indicate that the narrow emission peaks origin from the deep bound exciton and the dislocation may act as the bounding center.