干法刻蚀和湿法刻蚀制备硅微尖的比较

THE COMPARISON OF Si TIP FABRICATION METHODS BETWEEN DRY ETCHING AND WET ETCHING

主要研究了用干法刻蚀和各向同性湿法刻蚀的方法在〈１００〉晶面和〈１１１〉晶面的单晶硅衬底上制备硅微尖．结果表明干法刻蚀和〈１１１〉晶面的硅衬底各向同性湿法腐蚀容易制备出顶端曲率半径比较小的硅微尖，通过实验。

We fabricated Si tips by dry etching 〈100〉 Si substrate and by one step wet chemical etching 〈111〉 Si substrate in solution of HF∶HNO 3∶H 2O=1.5∶15∶5. The radii of Si tips'top about 10～20nm were gotten after experiment.