张应变In_(1-x)Ga_xAs_yP_(1-y)/InP材料光致荧光谱温度特性的测试与分析

INVESTIGATION OF TENSILE STRAINED,LONG WAVELENGTH In_[1-x]Ga_xAs_yP_[1-y]/InP WITH QUANTUM WELL STRUCTURE  BY PHTOLUMINESCENCE MEASUREMENTS

报道了具有２，３个量子阱的Ｉｎ１－ｘ１Ｇａｘ１Ａｓｙ１Ｐ１－ｙ１／Ｉｎ１－ｘ２Ｇａｘ２Ａｓｙ２Ｐ１－ｙ２／ＩｎＰ张应变量子阱材料的光致荧光谱和Ｘ射线双晶衍射摇摆曲线，指出了光致荧光峰为量子阱导带中第一子带电子和价带第一轻、重空穴子带中空穴复合所致．理论上分析了光致荧光谱中双峰强度比随温度的变化关系，Ｎｏ．５７７，Ｎｏ．５７２材料的理论计算与实测结果比较符合，并求得了失配率和轻、重空穴子带分离值的近似关系，讨论了理论计算与实测结果的差异．

AbstractThe Photoluminescence (PL) Spectra and the double Crystal X ray diffraction rocking curves from tensile strained quantum materials with 2 and 3 wells are reported in this paper.They indicate that PL peaks result from the intrinsic recombination mechanisms between the electrons in the first conducting subband and the holes in the first light,heavy hole subband in the quantum well materials.We have analysed the variation of the twin peak intensity ratio with temperature theoretically.The calculation result for No.577 and No.572 is basically in agreement with the measured one.The approximate relation of the split value ΔE1 of light heavy hole subband with the mismatch rate ε is found.The difference of the theoretic calculation value and the measured result for the split value from the first light hole subband and the first heavy hole one is discussed.