激光二极管抽运Nd∶YVO_4晶体1342nm和671nm激光器研究

DIODE PUMPED Nd∶YVO_ 4 LASER EMITTING AT 1342nm AND 671nm

报道了激光二极管抽运的Ｎｄ∶ＹＶＯ４晶体１３４２和６７１ｎｍ激光特性．１３４２ｎｍ激光最大输出功率为１７５Ｗ，光光转换效率为３２１％，斜效率为４３％．利用Ⅰ类非临界相位匹配ＬＢＯ晶体腔内倍频，当输入抽运功率为６Ｗ时，获得功率为５０２ｍＷ的６７１ｎｍ激光输出，光光转换效率超过８３％；当６７１ｎｍ激光输出功率为４００ｍＷ时，短期的不稳定度小于２％．

AbstractWe report here a diode pumped Nd∶YVO_ 4 laser emitting at 1342 and 671nm.A maximum output power of 1.75W at 1342nm was obtained under an incident pump power of 5.45W,with an optical to optical conversion efficiency of up to 32.1%.With a type Ⅰ noncritically phase matched LBO crystal as the intracavity frequency doubler,over 500mW of 671nm light was obtained at 6W of incident pump power,the optical optical conversion efficiency being 8.3%.The output power fluctuates less than 5% while the temperature change of the LBO crystal oven was maintained ±0.5℃ at the phase matched temperature.