PECVD a-SiNx∶H薄膜中的氢分布

ANALYSIS ON HYDROGEN IN PECVD a SiNx∶H

用红外光谱、质子核磁共振谱对以ＳｉＨ４／ＮＨ３／Ｎ２混合气体为源、用等离子体增强化学气相淀积法淀积的非晶氢化氮化硅（ａＳｉＮｘ∶Ｈ）薄膜进行了分析，结果表明膜中Ｈ以ＳｉＨ和ＮＨ形式存在，均呈集聚和疏散两种分布状态，衬底温度影响氢的总量和分布均匀性，射频功率显著影响［ＮＨ］／［ＳｉＨ］，退火后氢仍呈集聚和疏散两种分布．

Amorphous hydrogenated silicon nitride (a SiNx∶H) films deposited by plasma enhanced chemical vapor deposition using SiH 4/NH 3/N 2 mixtures are analysed by infrared and proton nuclear magnetic resonance. The results demonstrate that hydrogen in the films exists in the forms of Si H and N H, both of which are in the state of cluster and dispersion. Substrate temperature effects on total hydrogen density and homogeneity,rf power controls the ratio of N H / Si H ; after annealing, the spatial distribution of hydrogen is still in cluster and dispersion phase.