摘要
考虑到非简并半导体中载流子的能量是温度的函数，给出了非简并半导体中汤姆孙系数、汤姆孙电动势和汤姆孙热的更附合实际的量子统计表示，揭示了半导体中汤姆孙效应的微观机理．
Considering that the carrier energy in nondegenerate semiconductor should be a function of temperature, nonequilibrium quantum statistic expressions of Thomson coefficient, electric potential difference and heat are given. They are more actual and acurate.
出处
《大学物理》
1998年第10期6-9,共4页
College Physics
