硫系玻璃的N^+离子注入及表面改性研究

N + IMPLANTATION ON SURFACE PROPERTY MODIFICATION OF CHALCOGENIDE GLASSES

首次对Ａｓ－Ｇｅ－Ｓｅ三元系统和Ａｓ－Ｇｅ－Ｓｅ－Ｔｅ四元系统的硫系玻璃试样进行了Ｎ＋离子注入试验。结果表明，玻璃试样的显微硬度随Ｎ＋离子注入剂量的增加而提高，并且在注入剂量达到２．５×１０１６附近的数值时为最大。ＸＰＳ谱结果显示，在Ａｒ＋离子轰击６分钟后的试样表面出现Ｎ１ｓ的结合能峰，此外各元素的结合能峰也在Ｎ＋离子注入后发生了位移，并随Ａｒ＋离子轰击时间向高能方向移动。

The utilization of ion implantation in material surface property modification has conventionally been confirmed in oxide glasses. The paper reportd a new study on the effect of N + ion implantation on microhardness of chalcogenide glasses in two systems, Ge-As-Se and Ge-As-Se-Te. Microhardness of the glasses was shown to increase with increasing N + ion dosage up to a level of 2.5x10 16 ions/cm 2. Further increases in the dose of N + ions resulted in decreases in microhardness. By using the results of XPS for a number of Ar + ion etching durations, the depth profile of implanted N + ions has been suggested qualitatively. The position of the XPS peak for all elements was found in shift to the higher binding energy after N + ion implantation and/or with increasing etching duration. The highest values were shown at the depth at which the concentration of N + ions was highest.