用拉曼散射光谱估算纳米Ge晶粒平均尺寸

Estimation of Crystal Size of nc Ge by Raman Scattering Spectra

用射频共溅射技术和真空退火方法制备了埋入ＳｉＯ２基底中的纳米Ｇｅ复合膜（ｎｃ－Ｇｅ／ＳｉＯ２）。测量了不同温度退火后该复合膜的拉曼散射光谱，其结果与晶体Ｇｅ的拉曼谱相比，纳米Ｇｅ的拉曼峰位红移峰形变宽；用拉曼谱的参数计算了纳米Ｇｅ晶粒的平均尺寸。

Germanium nanocrystals embedded in SiO 2 glassy matrix have been prepared on glass substrates and Si(100) wafers by r.f. cosputtering and post annealing methods. Raman scattering spectra at various annealing temperature were measured. Compared with bulk Ge, a red shift and broadening of Raman scattering spectra were observed. According to the parameters of Raman scattering spectra, we calculated the average crystal size of nc Ge. The experimental results are in agreement with the phonon confinement theory.