非晶态Ge/SiO_2超晶格结构与特性

THE STRUCTURE AND PROPERTIES OF AMORPHOUS Ge/SiO_2 SUPERLATTICES

在双靶射频溅射系统中，以氢气为工作气体，交替溅射高纯Ge和SiO2，制备出了非晶态Ge／SiO2超晶格．小角度X射线衍射分析结果表明样品具有良好的周期性和界面平整性．其光学带降Eopt由红外透射、反射谱确定．当锗势阱层厚度从0．38nm减小到0.12nm时，超晶格光学带欧发生约0．3eV的游移．

The amorphous Ge/SiO2 superlattices have been prepared by rf sputtering with poIycrystalline Ge and quata targets in Ar ambient. Small angle X-ray diffraction measurement was carried to invedigate the structure of the samples, the results indicate the abrupt intedece and highly homogeneous layered structure of the superlattices. The optical band-gap of the superlattices were determined by infrared transmission and reflection spectra, the blue shift of about 0.3eV of optical band-gap was found when the width of Ge potential well decrease from 0.38nm to 0.12nm.