摘要
文中介绍了一低驱动电压接触式RF-MEMS开关,开关采取了两端固定的＂桥式＂结构,在桥与支撑点间采用折叠弯曲的铰链结构,而且紧靠中央信号线的旁边各有一个较大面积的电极,这些措施降低了开关的驱动电压。整个工艺采用表面微加工工艺。由实验测试可知：开关驱动电压11 V左右,与ANSYS模拟的值12 V基本一致,开关的S参数,在的范围内,插入损耗要小于-1 dB,在频段（≤5 GHz）,开关的隔离度要优于-30 dB,在频段5~10 GHz,隔离度也要高于-20 dB.
A low-voltage DC-contact RF MEMS switches was presented. The design was based on the standard fixed-fixed beam structure. The low-voltage design was achieved using narrow meander support structures, and two large pads on both sides of the switch were used as the actuation electrodes. RF MEMS switches were fabricated via a surface micromachining process. The switch has an actuation voltage of 11 V,which was close to the simulated value of 12 V. The insertion loss is less than - 1 dB from DC up to 10 GHz,the isolation is higher than -30 dB from DC up to 5 GHz,and higher than -20 dB from 5 GHz up to 10 GHz.
出处
《仪表技术与传感器》
CSCD
北大核心
2009年第10期81-82,共2页
Instrument Technique and Sensor
关键词
RF-MEMS开关
驱动电压
隔离度
DC-contact RF-MEMS switches
actuation voltage
isolation
insertion loss
