摘要
研究了在MgB2超导体中,Al、C以及这两种元素共同掺杂时对样品的超导转变温度、不可逆场、以及临界电流的影响。研究发现,当掺杂电子量相同时,Al掺杂比C掺杂对超导电性有更强的抑制作用。当Al、C共掺时,对于相同的掺C量,Al的掺杂作用减缓C掺杂对Tc的抑制作用。同时C掺杂可以有效的提高MgB2超导体在高场下的临界电流密度,Al,C共掺和单独掺C的两组样品中掺C都有相似的行为特性。
The influence of the carbon and aluminum doping in MgB2 superconductor on Jc, Hirr and Tc has been presented in this paper. The observed decrease of Tc of samples could be attributed to the band filling effect and interband scattering. The similar behavior of Hirr versus contentions C was observed in the both series of samples. It is found that transition temperature is suppressed more severely doping with Al than with C. The doping effect of C is depressed by Al doping when both element are doped simultaneity.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2008年第A04期87-90,共4页
Rare Metal Materials and Engineering
基金
国家自然科学基金项目(50588201)
国家重大基础研究项目“973”(2007CB616906)资助
关键词
MGB2
临界电流密度
超导电性
MgB2 critical current density irreversibility field