金属基底上IBAD-YSZ缓冲层的生长机理

Growth Mechanism of IBAD-YSZ Thin Film on Hastelloy Substrates

用离子束辅助沉积(IBAD)方法,变换辅助离子束的能量和束流密度,在Hastelloy基底上制备了钇稳定氧化锆(YSZ)薄膜,作为涂层导体的缓冲层。XRD的结果显示:在一定的离子能量和束流密度的范围内,能够制备出高质量双轴织构的(001)取向的YSZ缓冲层,随着辅助离子束能量和束流密度的增大,IBAD-YSZ的面外取向和面内织构都出现先变好又变坏的现象。文中用辅助离子束对薄膜破坏程度的各向异性对结果做了解释。

Biaxially textured yttria stabilized zirconia （YSZ） （001） thin films, as buffer layers of coated conductors, were deposited on hastelloy substrates by ion beam assisted sputtering deposition （IBAD） method with different assisting beam current density Ja and assisting ion energy Ei. The results of X-ray diffraction show that biaxially textured YSZ buffer layer can be obtained within an appropriate Ja anf Ei range. It is found that with Ja and Ei increasing, the orientation degree of the film initially increases and then decreases, which is explained in the paper by anistropic damage of assisting ions.