刷洗对硅单晶抛光片表面质量的影响

EFFECT OF BRUSHING ON SURFACE QUALITY OF POLISHED SINGLE CRYSTAL SILICON WAFERS

本文研究了用SVG-18DWC双面擦片机刷洗经RCA工艺清洗后的硅单晶抛光片表面。结果表明：经SVG-18DWC双面擦片机刷洗后，抛光片的表面颗粒有明显的减少，经WISCR－80测试Φ100mm的抛光片，表面大于0.3μm的颗粒总数小于10个／片，而抛光片表面的部分金属杂质沾污有明显的增加。

The surfaces of single crystal silicon wafers cleaned by RCA Process were experimentally brushed with SVG-18DWC double-side scrubbing machine. The results show that the particles on the surfaces of the polished silicon waferswere obviously diminished after brushing. Through WIS CR-80 test, the 100 mm polished silicon wafers was found out tobe the particles with greater than 0.3 μp total number less than 10 each waler, but the metallic impurity contaminants onthe surfaces of the wafers were found out to be more serious.