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热处理工艺对室温制备ZnO∶Al薄膜结构与光电性能的影响 被引量：2

Effects of Heat Treatment Process on Structure and Photoelectric Properties of ZnO∶Al Films Deposited at Room Temperature
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摘要 采用室温溅射加后续退火工艺制备了ZnO∶Al透明导电薄膜。研究了热处理工艺对薄膜微观结构和光电性能的影响。研究表明:退火有助于减小Al3+对Zn2+的取代造成的晶格畸变,消除应力,促进晶粒长大,有效提高电子浓度和迁移率,降低电阻率;当溅射功率为80W、退火温度为320℃时,薄膜的电阻率可低至8.6×10-4Ω.cm;退火气氛对薄膜的导电性能有较大影响,真空退火可使吸附氧脱附,大大降低薄膜的方块电阻。而退火温度和退火气氛均对ZnO∶Al薄膜的透光率没有明显影响,薄膜的透光率在86%以上。 ZnO∶Al thin films based on Al doped ZnO ceramic target were prepared by non-reactive DC magnetron sputtering at room temperature. The effects of heat treatment process on microstructure,electrical and optical properties of ZnO∶Al films were investigated. The experimental results show that annealing process in vacuum could improve the conductive properties by eliminating lattice deformation and stress,increasing the carrier concentration and the mobility,decreasing electrical resistivities to a value of 8.6×10^-4 Ω·cm when the sputtering power is 80 W and the annealing temperature is 320 ℃. The annealing process had little effect on the optical transmittance of ZnO∶Al films,which is above 86%.
作者 任明放 王华 许积文 杨玲
机构地区 桂林电子科技大学信息材料科学与工程系
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2009年第5期1189-1192,1198,共5页 Journal of Synthetic Crystals
基金 广西高校百名中青年学科带头人资助计划项目(No.RC20060809014)
关键词 ZnO∶Al 光电性能 磁控溅射 退火工艺 ZnO∶Al optical and electrical properties magnetron sputtering annealing technology
分类号 O484 [理学—固体物理]
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参考文献11

  • 1Minami T. New n-type Transparent Conducting Oxides[ J ]. MRS Bulletin, 2008, (8) :38-44.
  • 2Wang H, Xu J W, Ren M F, et al. Room Temperature Deposition and Properties of ZnO: Al Thin Films [ J ]. J. Mater. Sci. : Materials in Electronics, 2008, 19 ( 11 ) : 1135-1139.
  • 3Kim S H, Moon Y K, Moon D Y, et al. Influence of Oxygen on the Electrical Properties of Aluminum-doped Zinc-Oxide Thin Films[ J]. J. Korean Physical Society, 2006, 49 ( 3 ) : 1256-1259.
  • 4Szyszka B, Sittinger V, Jiang X, et al. Transparent and Conductive ZnO: Al Films Deposited by Large Area Reactive Magnetron Sputtering[ J ]. Thin Solid Films, 2003, 442 ( 1-2 ): 179-183.
  • 5Chang J F, Hon M H. The Effect of Deposition Temperature on the Properties of Al-doped Zinc Oxide Thin Films[ J ]. Thin Solid Films, 2001, 386( 1 ) :79-86.
  • 6Ando E, Miyazaki M. Moisture Resistance of the Low-emissivity Coatings with A Layer Structure of Al-doped ZnO/Ag/Al-doped ZnO [ J]. Thin Solid Films, 2001,392(2) :289-293.
  • 7Kim H, Horwitz J S, Qadri S B, et al. Epitaxial Growth of Al-doped ZnO Thin Films Grown by Pulsed Laser Deposition[ J]. Thin Solid Films, 2002, (420-421) :107-111.
  • 8Lin S S, Huang J L, Sajgalik P. Effects of Substrate Temperature on the Properties of Heavily Al-doped ZnO Films by Simultaneous R. F. and D. C. Magnetron Sputtering [ J ]. Surface and Coatings Technology, 2005, 190 (1) :39-41.
  • 9Martinez M A, Herrero J, Gutierrez M T. Deposition of Transparent and Conductive Al-doped ZnO Thin Films for Photovohaic Solar Cells[ J]. Solar Energy Materials and Solar Cells, 1997, 45( 1 ) :75-86.
  • 10Igasaki Y, Saito H. The Effects of Zinc Diffusion on the Electrical. and Optical Properties of ZnO: Al Films Prepared by R. F. Reactive Sputtering [J]. Thins Solid Films, 1991, 199(2) :223-230.

同被引文献25

  • 1李微,孙云,何青,刘芳芳,李凤岩.孪生对靶直流磁控溅射制备ZnO:Al薄膜及其特性研究[J].人工晶体学报,2006,35(4):761-764. 被引量：10
  • 2Kim M H,Bang Y C,Park N M,et al.Growth of High-quality GaN on Si(111) Substrate by Ultrahigh Vacuum Chemical Vapor Deposition[J].Applied Physics Letters,2001,78(19):2858-2860.
  • 3Wu J,Walukievicz W,Yu K M,et al.Unusual Properties of the Fundamental Band Gap of InN[J].Applied Physics Letters,2002,80(21):3967-3969.
  • 4Macho A,Christian M,Mohammed K,et al.High-grade Eefficiency Ⅲ-nitrides Semiconductor Solar Cell[J].Microelectronics Journal,2009,40(3):427-434.
  • 5Xu Y,Gu B,Qin F W,et al.Electron Cyclotron Resonance Plasma Enhanced Metalorganic Chemical Vapor Deposition System with Monitoring in Situ for Epitaxial Growth of Group-Ⅲ Nitrides[J].Journal of Vacuum Science and Technology A,2004,22(2):302-308.
  • 6Joonmo P,Song K M,Jeon S R,et al.Doping Selective Lateral Electrochemical Etching of GaN for Chemical Lift-off[J].Applied Physics Letters,2009,94:221907.
  • 7Kobayashi A,Kawano S,Kawaguchi Y,et al.Room Temperature Epitaxial Growth of m-plane GaN on Lattice-matched ZnO Substrates[J].Applied Physics Letters,2007,90:041908.
  • 8Varadarajan E,Puviarasu P,Kumar J,et al.On the Chloride Vapor-phase Epitaxy Growth of GaN and Its Characterization[J].Journal of Crystal Growth,2004,260(1-2):43-49.
  • 9Hamdani F,Yeadon M,Smith D J,et al.Microstructure and Optical Properties of Epitaxial GaN on ZnO (0001) Grown by Reactive Molecular Beam Epitaxy[J].Journal of Applied Physics,1998,83(2):983-990.
  • 10Balakrishnan K,Okumura H,Yoshida S.Study on the Initial Stages of Heteroepitaxial Growth of Hexagonal GaN on Sapphire by Plasma Assisted MBE[J].Journal of Crystal Growth,1998,189-190:244-249.

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人工晶体学报
2009年 第5期

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