摘要
低压ZnO非线性电阻是日益普及的低压设备、仪器所必需的过压保护元件和浪涌吸收元件。本文对传统的ZnO非线性电阻器配方进行改进,分析和研究了TiO2等添加剂对Zno半导瓷微结构及性能影响的机理,对不同添加剂ZnO电阻器的伏安特性和表面形貌进行了测试和分析,在适当的工艺下得到压敏电压为15~25V,非线性系数α为30左右的高性能低压ZnO非线性电阻。
ZnO non-linear resistors with low threshold voltage are necessary overvoltage protecting elements for low voltage equipment and instruments. The traditional formula of ZnO non-linear resistors was changed and modified. The effects of additives such as TiO2 and SiO2 on the microstructure and performances of ZnO semi-ceramics were investigated. And the V-I characteristics and surface morphology were analyzed. The ZnO nonlinear resistors with low threshold voltage (15~25 V) and high non-linear coefficient (about 30) were prepared.
出处
《光电子技术》
CAS
1998年第3期197-202,共6页
Optoelectronic Technology
关键词
添加剂
压敏电压
非线性电阻器
电子陶瓷元件
ZnO, non-linear resistors,additive,threshold voltage, non-linear coefficient