CdTe/ZnTe应变量子阱中的浅施主结合能

Binding Energy of Shallow Donor Impurity in CdTe/ZnTe Strained Quantum Well

本文研究了介电常数失配对ＣｄＴｅ／ＺｎＴｅ应变量子阱中浅施主杂质结合能的影响．在有效质量近似下，利用变分方法计算了阱宽、杂质位置及应变对结合能的影响。

Abstract The effect of dielectric mismatch and donor position on binding energy in CdTe/ZnTe strained quantum well is investigated. We get the conclusion that the effect of dielectric mismatch causes the decrease of binding energy. We have discussed the difference between our conclusions and previous conclusions