与硅平面工艺兼容的p^-/p^+型多孔硅的发光特性研究

Photoluminescence Study of p -/p + Type Porous Silicon Compatible With Planar Si Processing

ｐ－／ｐ＋型多孔硅电致发光器件对实现硅基光电子集成具有重要的意义，我们通过改变样品衬底的离子注入浓度和阳极氧化条件，在ｐ－／ｐ＋型单晶硅衬底上生长了不同的多孔硅样品后，在纯氧和稀氧氛围下对样品进行了８００℃高温退火处理．通过测量样品的光致发光谱，研究了样品衬底离子注入浓度，阳极氧化条件及后处理条件等对ｐ－／ｐ＋型多孔硅样品发光的影响，为研制与硅平面工艺兼容的多孔硅发光器件。

Abstract The light emitting device using p -/p + type porous Si plays an important role in achieving silicon based optoelectronice integration. We have prepared samples of porous Si on p -/p + type silicon wafer with different concentrations of dopant and under different anodic etching conditions. The photoluminescence spectra of these samples as prepared and also after annealing at 800℃ in 10% oxygen or pure oxygen are measured and analyzed to investigate the influence of dopant concentration, anodic etching condition and annealing conditon. The results provide relevant parameters which are important for the design of device and a foundation to promobe the manufacturing process another step to reality.