量子阱激光器的阈值电流和外量子效率

Threshold current and external quantum efficiency of quantum well lasers

对于半导体分别限制单量子阱激光器，为了降低阈值电流，提高外量子效率，分析和讨论了影响阈值电流和外量子效率的各种因素，并做了一定的数值计算，给出了最佳结构参数。

For semiconductor separate confinement single quantum well lasers, in order to decrease the threshold current and increase the external quantum efficiency,various influences on the threshold current and efficiency of lasers are analyzed and discussed,and the optimum structure para-meters are given after making some calculation.