摘要
利用低压金属有机化合物化学汽相沉积（ＭＯＣＶＤ）生长技术在ＩｎＰ衬底上生长ＩｎＧａＡｓ／ＩｎＰ应变量子阱、超晶格和ＩｎＧａＡｓＰ／ＩｎＰ量子阱结构材料，利用７７Ｋ光荧光（ＰＬ）测量这一应变量子阱和量子阱的光学性质，利用双晶Ｘ光测量应变超晶格的性质。
InGaAs/InP strained quantum well and superlattice,and InGaAsP quantum well were grown on InP substrate by low-pressure metal organic vapor deposition (LP-MOCVD). The optical characteristics of the strained quantum well and quantum well were studied by photoluminescent (PL) at 77 K, while the characteristics of InGaAs/InP strained superlattice are measured by X-ray double crystal diffraction.
出处
《半导体光电》
CAS
CSCD
北大核心
1998年第5期300-303,共4页
Semiconductor Optoelectronics
基金
福建省自然科学基金
国家自然科学基金
