生长材料中掺杂杂质纵向分布的扩散生长理论

Diffusion growth model of doping impurity longitudinal profile in the grown materials

从ＭＯＣＶＤ和卤化物ＶＰＥ的生长装置出发，分析了量子阱激光材料和微波电子材料中引入杂质的纵向分布程序过程。采用了掺入杂质分子经载体气体漂移扩散输运和生长过程中再扩散的数学物理理论，导出了掺杂杂质最终纵向浓度分布的数学定量解析式。根据本理论，提出了陡峭掺杂和均匀纵向浓度分布的工艺解决方案。

The program process of the longitudinal impurity profile introduced in the quantum well (QW) laser and microwave electronic materials is analyzed,based on the growth system by me-talorganic chemical vapor deposition(MOCVD) and microwave electronic materials and chloride vapor phase epitaxy(VPE).The quantitative solution of the final longitudinal direction impurity distribution using the mathematical physics model of impurity carrier-gas transport drift and rediffusion in growth process was carried out.A technology for giving a reference to grown impurity profile of abrupt doping and uniform longitudinal direction based on the theory is presented.