摘要
欧姆接触的好坏,对高功率半导体激光器至关重要。降低接触电阻,有利于降低阈值电流,提高量子效率和延长寿命。为此,在进行了大量的实验后,找到了降低欧姆接触电阻的最佳工艺条件,获得了小于0.06Ω的最低电阻。
Ohmic contact is a critical factor for high power semiconductor lasers.Reducing contact resistance is advantageous for lowering threshold current ,enhancing quantum efficiency and extending lifetime .To do this,By use of the experiments,the optimum technological conditions are obtained.The ohmic contact resistance has been lowered to below 0.06 Ω.
出处
《半导体光电》
CAS
CSCD
北大核心
1998年第5期312-313,共2页
Semiconductor Optoelectronics
基金
国家"八五"预研项目
关键词
半导体激光器
欧姆接触
接触电阻
合金
Semiconductor Laser,Ohmic Contact,Contact Resistance,Alloy